| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 1.7 kW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 1700 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1700000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.46 mm |
Minimize the current at your gate with the IXGX320N60B3 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 1700000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
IXYS Semiconductor
7 Pages / 0.18 MByte
IXYS Semiconductor
6 Pages / 0.19 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 500A 1700000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 320A 1000000mW 3Pin(3+Tab) PLUS 247
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