| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 90 mΩ |
| Power Dissipation | - |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 2800pF @100V(Vds) |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.24 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.45 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
●Features
●• fast COOLMOS®
● power MOSFET 4th generation
● - High blocking capability
● - Lowest resistance
● - Avalanche rated for unclamped inductive switching (UIS)
● - Low thermal resistance due to reduced chip thickness
●• Enhanced total power density
●Applications
●• Switched mode power supplies(SMPS)
●• Uninterruptible power supplies (UPS)
●• Power factor correction (PFC)
●• Welding
●• Inductive heating
●• PDP and LCD adapter
IXYS Semiconductor
4 Pages / 0.1 MByte
IXYS Semiconductor
Trans MOSFET N-CH 600V 35A 3Pin(3+Tab) TO-247AD
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