| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 30 mΩ |
| Polarity | N-CH |
| Power Dissipation | - |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 85A |
| Rise Time | 27 ns |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 20.29 mm |
| Size-Width | 5.31 mm |
| Size-Height | 26.59 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Features
●3RD Generation CoolMOS Power MOSFET
●\- High Blocking Capability
●\- Low on Resistance
●\- Avalanche Rated
●Low Thermal Resistance Due to Reduced Chip Thickness
●Applications
●Switch-Mode Power-Supplies
●Uninterruptible Power Supplies
●Power Factor Correction
●Welding
●Inductive Heating
IXYS Semiconductor
4 Pages / 0.2 MByte
IXYS Semiconductor
4 Pages / 0.54 MByte
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