TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Dissipation | 300000 mW |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Reverse recovery time | 2.1 µs |
Input Power (Max) | 300 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Bulk |
Size-Height | 21.46 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 1200V 55A 300W Through Hole TO-247AD
IXYS Semiconductor
5 Pages / 0.1 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 55A 300000mW 3Pin(3+Tab) TO-247AD
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