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IXRH40N120
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IXRH40N120 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 1200V 55A 300000mW 3Pin(3+Tab) TO-247AD
IXRH40N120 Datasheet PDF (5 Pages)
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IXRH40N120 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3
Case/PackageTO-247-3
Power Dissipation300000 mW
Breakdown Voltage (Collector to Emitter)1200 V
Reverse recovery time2.1 µs
Input Power (Max)300 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)300000 mW

IXRH40N120 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingBulk
Size-Height21.46 mm
Operating Temperature-55℃ ~ 150℃ (TJ)

IXRH40N120 Documents

IXRH40N120 Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.1 MByte

IXRH40 Documents

IXRH40N120 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 55A 300000mW 3Pin(3+Tab) TO-247AD
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