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IXSH24N60BD1
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IXSH24N60BD1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
Documentation:IXSH24N60BD1 Datasheet (2 Pages)
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IXSH24N60BD1 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time25 ns
Input Power (Max)150 W
Power Dissipation (Max)150 W
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IXSH24N60BD1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
View Datasheet >

IXSH24N60BD1 Documents

IXSH24N60BD1 Datasheet
IXYS Semiconductor
2 Pages / 0.1 MByte
IXSH24N60BD1 Other Datasheet PDF
IXYS Semiconductor
3 Pages / 0.27 MByte

IXSH24N60 Documents

IXSH24N60 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247
IXSH24N60AU1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXSH24N60B Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
IXSH24N60A Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin
IXSH24N60U1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin
IXSH24N60BD1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 150000mW 3Pin(3+Tab) TO-247AD
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