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IXSN62N60U1
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IXSN62N60U1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:SOT-227-4
Description:Trans IGBT Chip N-CH 600V 90A 250000mW 4Pin SOT-227B
Documentation:IXSN62N60U1 Datasheet (2 Pages)
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IXSN62N60U1 Datasheet PDF (2 Pages)
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IXSN62N60U1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins4 Pin
Case/PackageSOT-227-4
Power Dissipation250000 mW
Breakdown Voltage (Collector to Emitter)600 V
Input Capacitance (Cies)4.5nF @25V
Input Power (Max)250 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)250000 mW
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IXSN62N60U1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Designs
PackagingTube
Size-Length38.2 mm
Size-Width25.07 mm
Size-Height9.6 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXSN62N60U1 Documents

IXSN62N60U1 Datasheet
IXYS Semiconductor
2 Pages / 0.18 MByte
IXSN62N60U1 Other Datasheet PDF
IXYS Semiconductor
3 Pages / 0.27 MByte

IXSN62N60 Documents

IXSN62N60U1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 90A 250000mW 4Pin SOT-227B
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