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IXTA3N100P
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IXTA3N100P Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-263-3
Description:N-Channel 1000V 3A 4.8Ω Surface Mount PolarVHV Power Mosfet - TO-263
Documentation:IXTA3N100P Datasheet (4 Pages)
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IXTA3N100P Datasheet PDF (4 Pages)
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IXTA3N100P Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Power Dissipation125 W
Drain to Source Voltage (Vds)1000 V
Rise Time27 ns
Input Capacitance (Ciss)1100pF @25V(Vds)
Input Power (Max)125 W
Fall Time29 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)125W (Tc)
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IXTA3N100P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length10.41 mm
Size-Width9.65 mm
Size-Height4.83 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXTA3N100P Documents

IXTA3N100P Datasheet
IXYS Semiconductor
4 Pages / 0.15 MByte
IXTA3N100P Other Datasheet PDF
IXYS Semiconductor
4 Pages / 0.14 MByte

IXTA3N100 Documents

IXTA3N100P Datasheet PDF
IXYS Semiconductor
N-Channel 1000V 3A 4.8Ω Surface Mount PolarVHV Power Mosfet - TO-263
IXTA3N100D2 Datasheet PDF
IXYS Semiconductor
TO-263AA N-CH 1000V 3A
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