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IXTH80N20L
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IXTH80N20L Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-247-3
Description:TO-247 N-CH 200V 80A
Documentation:IXTH80N20L Datasheet (5 Pages)
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IXTH80N20L Datasheet PDF (5 Pages)
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IXTH80N20L Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Drain to Source Resistance (on) (Rds)32 mΩ
PolarityN-CH
Power Dissipation520 W
Input Capacitance616 pF
Drain to Source Voltage (Vds)200 V
Breakdown Voltage (Drain to Source)200 V
Continuous Drain Current (Ids)80A
Rise Time44 ns
Input Capacitance (Ciss)6160pF @25V(Vds)
Fall Time29 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)520W (Tc)
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IXTH80N20L Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXTH80N20L Documents

IXTH80N20L Datasheet
IXYS Semiconductor
5 Pages / 0.12 MByte
IXTH80N20L Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.12 MByte

IXTH80N20 Documents

IXTH80N20L Datasheet PDF
IXYS Semiconductor
TO-247 N-CH 200V 80A
IXTH80N20L Datasheet PDF
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Power Field-Effect Transistor,
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