TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-264-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.024 Ω |
Polarity | N-Channel |
Power Dissipation | 700 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 250 V |
Continuous Drain Current (Ids) | 120 A |
Rise Time | 33 ns |
Input Capacitance (Ciss) | 8000pF @25V(Vds) |
Input Power (Max) | 700 W |
Fall Time | 33 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 700W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IXTK120N25P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode. It features reduced static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, laser drivers, switched-mode and resonant-mode power supplies.
● International standard packages
● Avalanche rating
● Low package inductance
● Easy to mount
● Space saving
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5 Pages / 0.16 MByte
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Trans MOSFET N-CH 250V 120A 3Pin(3+Tab) TO-264AA
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