TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-264-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.018 Ω |
Polarity | N-Channel |
Power Dissipation | 800 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 200 V |
Continuous Drain Current (Ids) | 140 A |
Rise Time | 35 ns |
Reverse recovery time | 180 ns |
Input Capacitance (Ciss) | 7500pF @25V(Vds) |
Fall Time | 90 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 800W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 19.96 mm |
Size-Width | 5.13 mm |
Size-Height | 26.16 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IXTK140N20P is a Polar™ single N-channel enhancement-mode Power MOSFET offers reduced static drain-to-source ON-resistance and high power density.
● International standard packages
● Unclamped inductive switching (UIS) rating
● Low package inductance - Easy to drive and to protect
● Easy to mount
● Space saving
IXYS Semiconductor
6 Pages / 0.15 MByte
IXYS Semiconductor
5 Pages / 0.15 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte
IXYS Semiconductor
Trans MOSFET N-CH 200V 140A 3Pin(3+Tab) TO-264AA
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