| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 960 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 60A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 24000pF @25V(Vds) |
| Fall Time | 38 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 960W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXTK60N50L2 is a LinearL2™ single N-channel enhancement-mode linear Power MOSFET with extended FBSOA. It is suitable for solid state circuit breakers, soft start controls, linear amplifiers, programmable loads and current regulators. It is designed for linear operation.
● International standard packages
● Avalanche rating
● Easy to mount
● Space saving
IXYS Semiconductor
8 Pages / 0.17 MByte
IXYS Semiconductor
5 Pages / 0.14 MByte
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