IXTN102N65X2 Datasheet PDF - IXYS Semiconductor

Manufacturer:	IXYS Semiconductor
Category:	MOSFETs
Case Package:	SOT-227-4
Description:	SOT-227B N-CH 650V 76A
Documentation:	IXTN102N65X2 Datasheet (5 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IXTN102N65X2 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-227-4
Drain to Source Resistance (on) (Rds)	0.03 Ω
Polarity	N-Channel
Power Dissipation	595 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	650 V
Breakdown Voltage (Drain to Source)	650 V
Continuous Drain Current (Ids)	76A
Rise Time	28 ns
Input Capacitance (Ciss)	10900pF @25V(Vds)
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	595W (Tc)