Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTN200N10L2 Datasheet PDF
IXTN200N10L2
Price from AiPCBA

IXTN200N10L2 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:SOT-227-4
Description:IXTN200 Series 100V 11mOhm 540NC 830W N-Channel Power MOSFET - SOT-227
Documentation:IXTN200N10L2 Datasheet (5 Pages)
Pictures:
Symbol
Footprint
Pinout
Product Pictures
IXTN200N10L2 Datasheet PDF (5 Pages)
View Datasheet
Click page to view the detail

IXTN200N10L2 Specifications

TYPEDESCRIPTION
Number of Pins4 Pin
Case/PackageSOT-227-4
Power Dissipation830 W
Drain to Source Voltage (Vds)100 V
Rise Time225 ns
Input Capacitance (Ciss)23000pF @25V(Vds)
Fall Time27 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)830W (Tc)
View Datasheet >

IXTN200N10L2 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
Operating Temperature-55℃ ~ 150℃ (TJ)
View Datasheet >

IXTN200N10L2 Documents

IXTN200N10L2 Datasheet
IXYS Semiconductor
5 Pages / 0.16 MByte

IXTN200N10 Documents

IXTN200N10L2 Datasheet PDF
IXYS Semiconductor
IXTN200 Series 100V 11mOhm 540NC 830W N-Channel Power MOSFET - SOT-227
IXTN200N10T Datasheet PDF
IXYS Semiconductor
MOSFET N-CH 100V 200A SOT-227
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.

Relate Parts

 Privacy Statementsupport@adatasheet.com
CopyRight © 2015-2024 ADatasheet