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IXTN30N100L
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IXTN30N100L Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:SOT-227-4
Description:Trans MOSFET N-CH 1kV 30A 4Pin SOT-227B
Documentation:IXTN30N100L Datasheet (6 Pages)
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IXTN30N100L Specifications

TYPEDESCRIPTION
Mounting StyleChassis
Number of Pins4 Pin
Case/PackageSOT-227-4
Number of Channels1 Channel
Power Dissipation800 W
Drain to Source Voltage (Vds)1000 V
Rise Time70 ns
Input Capacitance (Ciss)13700pF @25V(Vds)
Input Power (Max)800 W
Fall Time78 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)800W (Tc)
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IXTN30N100L Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Width25.07 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXTN30N100L Documents

IXTN30N100L Datasheet
IXYS Semiconductor
6 Pages / 0.12 MByte
IXTN30N100L Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.12 MByte

IXTN30N100 Documents

IXTN30N100L Datasheet PDF
IXYS Semiconductor
Trans MOSFET N-CH 1kV 30A 4Pin SOT-227B
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