| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 735 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 24000pF @25V(Vds) |
| Input Power (Max) | 735 W |
| Fall Time | 38 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 735W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.23 mm |
| Size-Width | 25.42 mm |
| Size-Height | 12.22 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXTN60N50L2 is a LinearL2™ single N-channel enhancement-mode linear Power MOSFET with extended FBSOA. It is suitable for programmable loads, current regulators, battery chargers and DC choppers. It is designed for linear operation.
● International standard packages
● MiniBLOC with aluminium nitride isolation
● Easy to mount
● Space saving
● High power density
● UL94V-0 Flammability rating
IXYS Semiconductor
6 Pages / 0.12 MByte
IXYS Semiconductor
16 Pages / 0.13 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXTN60N50L2 MOSFET Transistor, LINEAR L2™, N Channel, 53A, 500V, 100mohm, 10V, 2.5V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
