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IXTP180N10T
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IXTP180N10T Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-220-3
Description:TO-220 N-CH 100V 180A
Documentation:IXTP180N10T Datasheet (6 Pages)
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IXTP180N10T Datasheet PDF (6 Pages)
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IXTP180N10T Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-220-3
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)6.4 mΩ
PolarityN-Channel
Power Dissipation480 W
Drain to Source Voltage (Vds)100 V
Breakdown Voltage (Drain to Source)100 V
Continuous Drain Current (Ids)180 A
Rise Time54 ns
Input Capacitance (Ciss)6900pF @25V(Vds)
Input Power (Max)480 W
Fall Time31 ns
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)480W (Tc)
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IXTP180N10T Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Designs
PackagingTube
Size-Length10.66 mm
Size-Width4.83 mm
Size-Height9.15 mm
Operating Temperature-55℃ ~ 175℃ (TJ)
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IXTP180N10T Documents

IXTP180N10T Datasheet
IXYS Semiconductor
6 Pages / 0.15 MByte

IXTP180N10 Documents

IXTP180N10T Datasheet PDF
IXYS Semiconductor
TO-220 N-CH 100V 180A
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