| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 3.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2.9 Ω |
| Polarity | N-Channel |
| Power Dissipation | 70 W |
| Threshold Voltage | 5.5 V |
| Input Capacitance | 411 pF |
| Gate Charge | 9.80 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 3.00 A |
| Rise Time | 25 ns |
| Reverse recovery time | 500 ns |
| Input Capacitance (Ciss) | 411pF @25V(Vds) |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 70W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXTP3N60P is a PolarHV™ N-channel enhancement-mode Power MOSFET features avalanche rated and low package inductance.
● International standard package
● Unclamped inductive switching (UIS) rated
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
4 Pages / 0.22 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte
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