| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 60 mΩ |
| Polarity | N-CH |
| Power Dissipation | 400 W |
| Drain to Source Voltage (Vds) | 250 V |
| Breakdown Voltage (Drain to Source) | 250 V |
| Continuous Drain Current (Ids) | 50A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 4000pF @25V(Vds) |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 400W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Trench Gate Power MOSFET
●N-Channel Enhancement Mode
●Features
●Avalanche Rated
●High Current Handling Capability
●Fast Intrinsic Rectifier
●Low RDS(on)
●Advantages
●High Power Density
●Easy to Mount
●Space Savings
●Applications
●DC-DC Coverters
●Battery Chargers
●Switch-Mode and Resonant-Mode Power Supplies
●DC Choppers
●AC and DC Motor Drives
●Uninterrupted Power Supplies
●High Speed Power Switching Applications
IXYS Semiconductor
6 Pages / 0.22 MByte
IXYS Semiconductor
6 Pages / 0.19 MByte
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