| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.027 Ω |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 6300 pF |
| Drain to Source Voltage (Vds) | 250 V |
| Continuous Drain Current (Ids) | 100 A |
| Rise Time | 26 ns |
| Input Capacitance (Ciss) | 6300pF @25V(Vds) |
| Input Power (Max) | 600 W |
| Fall Time | 28 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 600W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXTQ100N25P is a PolarHT™ N-channel enhancement-mode standard Power MOSFET offers reduced static drain-to-source ON-resistance and high power density.
● International standard packages
● Avalanche rating
● Unclamped inductive switching (UIS) rating
● Low package inductance - Easy to drive and to protect
● Easy to mount
● Space saving
IXYS Semiconductor
5 Pages / 0.26 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte
IXYS Semiconductor
Trans MOSFET N-CH 250V 100A 3Pin(3+Tab) TO-3P
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