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IXTQ170N10P
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IXTQ170N10P Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-3-3
Description:TO-3P N-CH 100V 170A
Documentation:IXTQ170N10P Datasheet (5 Pages)IXTQ170N10P Application Note (6 Pages)
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IXTQ170N10P Datasheet PDF (5 Pages)
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IXTQ170N10P Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-3-3
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)9 mΩ
PolarityN-Channel
Power Dissipation714 W
Threshold Voltage5 V
Drain to Source Voltage (Vds)100 V
Continuous Drain Current (Ids)170 A
Rise Time50 ns
Reverse recovery time120 ns
Input Capacitance (Ciss)6000pF @25V(Vds)
Fall Time33 ns
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)715W (Tc)
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IXTQ170N10P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length15.8 mm
Size-Width4.9 mm
Size-Height20.3 mm
Operating Temperature-55℃ ~ 175℃ (TJ)
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IXTQ170N10P Documents

IXTQ170N10P Datasheet
IXYS Semiconductor
5 Pages / 0.16 MByte
IXTQ170N10P Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.2 MByte
IXTQ170N10P Application Note
IXYS Semiconductor
6 Pages / 1.89 MByte

IXTQ170N10 Documents

IXTQ170N10P Datasheet PDF
IXYS Semiconductor
TO-3P N-CH 100V 170A
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