TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 22.0 A |
Case/Package | TO-3-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 270 mΩ |
Power Dissipation | 350 W |
Input Capacitance | 2.63 nF |
Gate Charge | 50.0 nC |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Continuous Drain Current (Ids) | 22.0 A |
Rise Time | 25 ns |
Input Capacitance (Ciss) | 2630pF @25V(Vds) |
Fall Time | 21 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 350W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.8 mm |
Size-Width | 4.9 mm |
Size-Height | 20.3 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel Enhancement Mode Avalanche Rated
●Features
●International standard packages
●Unclamped Inductive Switching (UIS) rated
●Low package inductance
● - easy to drive and to protect
●Advantages
●Easy to mount
●Space savings
●High power density
IXYS Semiconductor
6 Pages / 0.19 MByte
IXYS Semiconductor
5 Pages / 0.19 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 22A 3Pin(3+Tab) TO-3P
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