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IXTQ26N50P
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IXTQ26N50P Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-3-3
Description:N-Channel 500V 26A 230mΩ Through Hole PolarHV Power Mosfet - TO-3P
Documentation:IXTQ26N50P Datasheet (5 Pages)
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IXTQ26N50P Datasheet PDF (5 Pages)
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IXTQ26N50P Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Voltage Rating (DC)500 V
Current Rating26.0 A
Case/PackageTO-3-3
Power Dissipation400W (Tc)
Input Capacitance3.60 nF
Gate Charge65.0 nC
Drain to Source Voltage (Vds)500 V
Continuous Drain Current (Ids)26.0 A
Rise Time25 ns
Input Capacitance (Ciss)3600pF @25V(Vds)
Input Power (Max)400 W
Fall Time20 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)400W (Tc)
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IXTQ26N50P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXTQ26N50P Documents

IXTQ26N50P Datasheet
IXYS Semiconductor
5 Pages / 0.33 MByte

IXTQ26N50 Documents

IXTQ26N50P Datasheet PDF
IXYS Semiconductor
N-Channel 500V 26A 230mΩ Through Hole PolarHV Power Mosfet - TO-3P
IXTQ26N50PS Datasheet PDF
IXYS Semiconductor
Discrete MOSFETs: Standard N-channel Types
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