TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-268-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 170 mΩ |
Polarity | N-Channel |
Power Dissipation | 540 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Continuous Drain Current (Ids) | 40A |
Rise Time | 133 ns |
Input Capacitance (Ciss) | 10400 pF |
Input Power (Max) | 540 W |
Fall Time | 44 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 540W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 14 mm |
Size-Width | 16.05 mm |
Size-Height | 5.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
This IXTT40N50L2 power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 540000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes linear l2 technology.
IXYS Semiconductor
5 Pages / 0.17 MByte
IXYS Semiconductor
5 Pages / 0.18 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 40A 3Pin(2+Tab) TO-268
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