IXTT88N30P Datasheet PDF - IXYS Semiconductor

Manufacturer:	IXYS Semiconductor
Category:	MOSFETs
Case Package:	TO-268-3
Description:	TO-268 N-CH 300V 88A
Documentation:	IXTT88N30P Datasheet (5 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IXTT88N30P Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-268-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	40 mΩ
Polarity	N-CH
Power Dissipation	600 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	300 V
Breakdown Voltage (Drain to Source)	300 V
Continuous Drain Current (Ids)	88A
Rise Time	24 ns
Input Capacitance (Ciss)	6300pF @25V(Vds)
Fall Time	25 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	600W (Tc)