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IXTX4N300P3HV
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IXTX4N300P3HV Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-247-3
Description:2000V TO 3000V POLAR3 POWER MOSF
Documentation:IXTX4N300P3HV Datasheet (5 Pages)
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IXTX4N300P3HV Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Case/PackageTO-247-3
Power Dissipation960W (Tc)
Drain to Source Voltage (Vds)3000 V
Input Capacitance (Ciss)3680pF @25V(Vds)
Power Dissipation (Max)960W (Tc)
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IXTX4N300P3HV Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXTX4N300P3HV Documents

IXTX4N300P3HV Datasheet
IXYS Semiconductor
5 Pages / 0.17 MByte
IXTX4N300P3HV Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.17 MByte

IXTX4N300P3 Documents

IXTX4N300P3HV Datasheet PDF
IXYS Semiconductor
2000V TO 3000V POLAR3 POWER MOSF
IXTX4N300P3HV Datasheet PDF
Littelfuse
Power Field-Effect Transistor,
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