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IXTY08N100D2
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IXTY08N100D2 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-252-3
Description:TO-252AA N-CH 1000V 0.8A
Documentation:IXTY08N100D2 Datasheet (6 Pages)
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IXTY08N100D2 Datasheet PDF (6 Pages)
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IXTY08N100D2 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-252-3
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)21 Ω
PolarityN-CH
Power Dissipation60 W
Threshold Voltage2 V
Drain to Source Voltage (Vds)1000 V
Breakdown Voltage (Drain to Source)1000 V
Continuous Drain Current (Ids)0.8A
Rise Time57 ns
Input Capacitance (Ciss)325pF @25V(Vds)
Input Power (Max)60 W
Fall Time48 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)60W (Tc)
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IXTY08N100D2 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXTY08N100D2 Documents

IXTY08N100D2 Datasheet
IXYS Semiconductor
6 Pages / 0.17 MByte
IXTY08N100D2 Other Datasheet PDF
IXYS Semiconductor
6 Pages / 0.26 MByte

IXTY08N100 Documents

IXTY08N100D2 Datasheet PDF
IXYS Semiconductor
TO-252AA N-CH 1000V 0.8A
IXTY08N100P Datasheet PDF
IXYS Semiconductor
DPAK N-CH 1000V 0.8A
IXTY08N100D2 Datasheet PDF
Littelfuse
Power Field-Effect Transistor,
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