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IXXH75N60B3D1
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IXXH75N60B3D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 600V 160A 750000mW 3Pin(3+Tab) TO-247AD
Documentation:IXXH75N60B3D1 Datasheet (7 Pages)
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IXXH75N60B3D1 Datasheet PDF (7 Pages)
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IXXH75N60B3D1 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation750000 mW
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time25 ns
Input Power (Max)750 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)750000 mW
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IXXH75N60B3D1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
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IXXH75N60B3D1 Documents

IXXH75N60B3D1 Datasheet
IXYS Semiconductor
7 Pages / 0.2 MByte

IXXH75N60B3 Documents

IXXH75N60B3D1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 160A 750000mW 3Pin(3+Tab) TO-247AD
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