| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 500000 mW |
| Breakdown Voltage (Collector to Emitter) | 900 V |
| Reverse recovery time | 100 ns |
| Input Power (Max) | 500 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This IXYH40N90C3D1 IGBT transistor from Ixys Corporation will work perfectly in your circuit. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 500000 mW. It is made in a single configuration. This device is made with xpt technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
IXYS Semiconductor
8 Pages / 0.17 MByte
IXYS Semiconductor
7 Pages / 0.18 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 900V 105A 600000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 900V 90A 500000mW 3Pin(3+Tab) TO-247AD
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