| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 1.25 kW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 1250 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.25 kW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
You won"t need to worry about any lagging in your circuit with this IXYH82N120C3 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 1250000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
IXYS Semiconductor
6 Pages / 0.16 MByte
IXYS Semiconductor
6 Pages / 0.16 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 200A 1250000mW 3Pin(3+Tab) TO-247AD
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
