TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Dissipation | 660000 mW |
Breakdown Voltage (Collector to Emitter) | 4500 V |
Input Power (Max) | 660 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 660000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use the IXYX40N450HV IGBT transistor from Ixys Corporation as an electronic switch.
IXYS Semiconductor
4 Pages / 0.18 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 4500V 95A 660000mW
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