| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Polarity | N-Channel |
| Power Dissipation | 360 W |
| Drain to Source Voltage (Vds) | 500 V |
| Rise Time | 16.0 ns |
| Input Capacitance (Ciss) | 622pF @400V(Vds) |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 10000 mW |
IXYS Semiconductor
9 Pages / 0.3 MByte
IXYS Semiconductor
Trans RF MOSFET N-CH 500V 10A 8Pin
IXYS Semiconductor
N channel enhancement mode linear RF power MOSFET
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