TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 35.0 V |
Current Rating | 50.0 mA |
Case/Package | TO-226-3 |
Breakdown Voltage | -35.0 V |
Drain to Source Resistance (on) (Rds) | 50 Ω |
Polarity | N-Channel |
Power Dissipation | 350 mW |
Drain to Source Voltage (Vds) | 35.0 V |
Breakdown Voltage (Gate to Source) | 35.0 V |
Reverse Breakdown Voltage | 35 V |
Input Power (Max) | 350 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 350 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
This N-channel JFET device is designed for analog switching and chopper applications.
●Features
●---
● |
● Pb-Free Packages are Available
ON Semiconductor
5 Pages / 0.08 MByte
ON Semiconductor
5 Pages / 0.38 MByte
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