TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-39 |
Power Dissipation | 0.8 W |
Breakdown Voltage (Collector to Emitter) | 80 V |
hFE Min | 50 @500mA, 10V |
Input Power (Max) | 800 mW |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 800 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tray |
Material | Silicon |
Operating Temperature | -65℃ ~ 200℃ (TJ) |
This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.
Microsemi
6 Pages / 0.26 MByte
Microsemi
8 Pages / 0.26 MByte
Microsemi
Trans GP BJT NPN 50V 0.8A 3Pin TO-39
Microsemi
JAN Series 50V 800mA Through Hole NPN Silicon Switching Transistor - TO-18
Microsemi
JAN Series 60V 600mA 0.5W(1/2W) PNP Small Signal Silicon Transistor - TO-18
Microsemi
JAN Series 80V 1A 800mW Through Hole Low Power NPN Silicon Transistor - TO-5
Microsemi
JAN Series 60V 600mA PNP Through Hole Switching Silicon Transistor - TO-39
Microsemi
JAN Series 80V 1A 0.5W(1/2W) Through Hole Low Power NPN Silicon Transistor - TO-18
Microsemi
Trans GP BJT NPN 350V 1A 3Pin TO-39
Microsemi
Trans GP BJT NPN 80V 1A 3Pin TO-39
Microsemi
Trans GP BJT PNP 60V 3A 3Pin TO-5
Microsemi
Trans GP BJT NPN 80V 0.5A 3Pin TO-5
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.