| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Case/Package | TO-72-3 |
| Power Dissipation | 200 mW |
| Breakdown Voltage (Collector to Emitter) | 15 V |
| hFE Min | 20 @3mA, 1V |
| Input Power (Max) | 200 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bag |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
Your circuit will operate at higher RF frequencies with this JAN2N918 RF amplifier from Microsemi. This product"s minimum DC current gain is 10@0.5mA@10 V|20@3mA@1V|20@10mA@10V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has an operating temperature range of -65 °C to 200 °C.
Microsemi
1 Pages / 0.42 MByte
Microsemi
4 Pages / 0.17 MByte
Microsemi
Trans GP BJT NPN 50V 0.8A 3Pin TO-39
Microsemi
JAN Series 50V 800mA Through Hole NPN Silicon Switching Transistor - TO-18
Microsemi
JAN Series 60V 600mA 0.5W(1/2W) PNP Small Signal Silicon Transistor - TO-18
Microsemi
JAN Series 80V 1A 800mW Through Hole Low Power NPN Silicon Transistor - TO-5
Microsemi
JAN Series 60V 600mA PNP Through Hole Switching Silicon Transistor - TO-39
Microsemi
JAN Series 80V 1A 0.5W(1/2W) Through Hole Low Power NPN Silicon Transistor - TO-18
Microsemi
Trans GP BJT NPN 350V 1A 3Pin TO-39
Microsemi
Trans GP BJT NPN 80V 1A 3Pin TO-39
Microsemi
Trans GP BJT PNP 60V 3A 3Pin TO-5
Microsemi
Trans GP BJT NPN 80V 0.5A 3Pin TO-5
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
