| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SMD |
| Power Dissipation | 0.5 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
Microsemi has the solution to your circuit"s high-voltage requirements with their NPN JANS2N2222AUB general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
Microsemi
6 Pages / 0.13 MByte
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Semicoa Semiconductor
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3
Semicoa Semiconductor
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3
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