| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
This PNP JANS2N2907AUA general purpose bipolar junction transistor from Semicoa Semiconductors is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
Semicoa Semiconductor
35 Pages / 0.8 MByte
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin UB
Microsemi
Trans GP BJT PNP 60V 0.6A 4Pin UA
Semicoa Semiconductor
Trans GP BJT PNP 60V 0.6A 3Pin CSOT-23
Semicoa Semiconductor
Trans GP BJT PNP 60V 0.6A 4Pin UA
Semicoa Semiconductor
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin UB
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
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