| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-39 |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 175 V |
| hFE Min | 100 @50mA, 10V |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
This PNP JANS2N3637 general purpose bipolar junction transistor from Microsemi is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 175 V and a maximum emitter base voltage of 5 V.
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