| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | CSOT-23 |
| Power Dissipation | 0.5 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Material | Silicon |
Semicoa Semiconductors brings you the solution to your high-voltage BJT needs with their NPN JANSR2N3700UB general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
Semicoa Semiconductor
2 Pages / 0.59 MByte
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