TYPE | DESCRIPTION |
---|
Number of Pins | 3 Pin |
Case/Package | TO-18 |
Power Dissipation | 0.5 W |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bag |
Material | Silicon |
This NPN JANTX2N2222A general purpose bipolar junction transistor from Semicoa Semiconductors is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
Semicoa Semiconductor
2 Pages / 0.6 MByte
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