| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-18 |
| Power Dissipation | 0.5 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 500 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bag |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-218
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