TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-18-3 |
Polarity | PNP |
Power Dissipation | 500 mW |
Breakdown Voltage (Collector to Emitter) | 60 V |
Continuous Collector Current | 0.6A |
hFE Min | 40 @150mA, 10V |
Input Power (Max) | 500 mW |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | 65 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Operating Temperature | -65℃ ~ 200℃ (TJ) |
Thanks to Microsemi, your circuit can handle high levels of voltage using the PNP JANTX2N2906A general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
Microsemi
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Microsemi
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