TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-3 |
Polarity | PNP |
Power Dissipation | 5 W |
Breakdown Voltage (Collector to Emitter) | 60 V |
Continuous Collector Current | 30A |
hFE Min | 15 @15A, 2V |
Input Power (Max) | 5 W |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 5000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tray |
Material | Silicon |
Operating Temperature | -55℃ ~ 200℃ (TJ) |
Design various electronic circuits with this versatile PNP JANTX2N4399 GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 5000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.
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