| TYPE | DESCRIPTION |
|---|
| Number of Pins | 6 Pin |
| Case/Package | TO-205 |
| Forward Voltage | 1.8 V |
| Power Dissipation | 300 mW |
| Maximum Forward Voltage (Max) | 1.5 V |
| Forward Current (Max) | 40 mA |
| Fall Time (Max) | 0.85 µs |
| Fall Time (Max) | 0.85 µs |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
DESCRIPTION
●Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.
●Features:
●• High Reliability
●• Base lead provided for conventional transistor biasing
●• Rugged package
●• High gain, high voltage transistor
●• +1kV electrical isolation
●Applications:
●• Eliminate ground loops
●• Level shifting
●• Line receiver
●• Switching power supplies
●• Motor control
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2 Pages / 0.08 MByte
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