TYPE | DESCRIPTION |
---|
Frequency | 300 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-18-3 |
Polarity | NPN |
Power Dissipation | 0.5 W |
hFE Min | 75 |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Compared to other transistors, the NPN JANTXV2N2222A general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
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5 Pages / 0.06 MByte
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