| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-18 |
| Power Dissipation | 0.5 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
The NPN JANTXV2N3700 general purpose bipolar junction transistor, developed by Semicoa Semiconductors, is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
Semicoa Semiconductor
2 Pages / 0.2 MByte
Semicoa Semiconductor
8 Pages / 0.26 MByte
Microsemi
JANTXV Series 50V 800mA Through Hole NPN Silicon Switching Transistor - TO-18
Microsemi
JANTXV Series 60V 600mA Through Hole PNP Small Signal Silicon Transistor-TO-18
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin TO-39
Microsemi
Trans GP BJT NPN 50V 0.8A 3Pin TO-39
Microsemi
JANTXV Series 60V 600mA SMT PNP Small Signal Silicon Transistor - 4UB
Microsemi
JANTXV Series 15V 360mW Through Hole NPN Silicon Transistor - TO-206AA (TO-18)
Microsemi
JANTXV Series 250V 1A Through Hole NPN Low Power Silicon Transistor - TO-39
Microsemi
Trans GP BJT PNP 300V 1A 3Pin TO-39
Microsemi
Trans GP BJT PNP 35V 0.1A 3Pin TO-46
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
