| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SMD-4 |
| Polarity | PNP |
| Power Dissipation | 0.75 W |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| Continuous Collector Current | 1A |
| hFE Min | 30 @50mA, 10V |
| Input Power (Max) | 750 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 750 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
This family of 2N5415UA and 2N5416UA epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. The UA package is hermetically sealed and provides a low profile for minimizing board height. These devices are also available in the long-leaded TO-5, short-leaded TO-39 and low profile U4 packaging.
Microsemi
1 Pages / 0.42 MByte
Microsemi
6 Pages / 0.31 MByte
Microsemi
Trans GP BJT PNP 300V 1A 3Pin TO-5
Microsemi
Trans GP BJT PNP 300V 1A 3Pin TO-39
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