Introduction
●This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications.
●Product Features
●■ High performance
●— 85/88 ns initial access
●— 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
●— 25 ns asynchronous-page read mode
●— 4-, 8-, 16-, and continuous-word burst mode
●— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
●— 1.8 V buffered programming at 7 µs/byte (Typ)
●■ Architecture
●— Multi-Level Cell Technology: Highest Density at Lowest Cost
●— Asymmetrically-blocked architecture
●— Four 32-KByte parameter blocks: top or bottom configuration
●— 128-KByte main blocks
●■ Voltage and Power
●—VCC(core) voltage: 1.7 V – 2.0 V
●—VCCQ (I/O) voltage: 1.7 V – 3.6 V
●— Standby current: 55 µA (Typ) for 256-Mbit
●— 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
●■ Quality and Reliability
●— Operating temperature: –40 °C to +85 °C
● • 1-Gbit in SCSP is –30 °C to +85 °C
●— Minimum 100,000 erase cycles per block
●— ETOX™ VIII process technology (130 nm)
●■ Security
●— One-Time Programmable Registers:
● • 64 unique factory device identifier bits
● • 64 user-programmable OTP bits
● • Additional 2048 user-programmable OTP bits
●— Selectable OTP Space in Main Array:
● • 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
●— Absolute write protection: VPP= VSS
●— Power-transition erase/program lockout
●— Individual zero-latency block locking
●— Individual block lock-down
●■ Software
●— 20 µs (Typ) program suspend
●— 20 µs (Typ) erase suspend
●—Intel® Flash Data Integrator optimized
●— Basic Command Set and Extended Command Set compatible
●— Common Flash Interface capable
●■ Density and Packaging
●— 64/128/256-Mbit densities in 56-Lead TSOP package
●— 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
●— 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
●— 16-bit wide data bus
