The JS28F640P33TF70A is a 64MB NOR Flash Memory provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and data storage. Upon initial power-up or return from reset, the device defaults to asynchronous page-mode read. Configuring the RCR enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with user-supplied clock signal. A WAIT signal provides an easy CPU-to-flash memory synchronization. In addition to the enhanced architecture and interface, the device incorporates technology that enables fast factory program and erase operations. The device features a 256-word buffer to enable optimum programming performance, which can improve system programming throughput time significantly to 1.8Mbyte/s. The P33-65nm SBC device supports read operations with VCC at 3V and erase and program operations with VPP at 3/9V.
● High performance - 70ns initial access time for BGA
● Asymmetrically-blocked architecture
● Blank check to verify an erased block
● Continuous synchronous read current - 23mA typical at 52MHz
● Absolute write protection - VPP = VSS
● Power-transition erase/program lockout
● Individual zero-latency block locking
● Individual block lock-down capability
● Password access
● Basic command set and extended function Interface (EFI) command set compatible
● Common flash interface capable
● Minimum 100000 erase cycles per block
