K4H561638B-TCA0 Datasheet PDF - Samsung

Key Features

●Features

●• Double-data-rate architecture; two data transfers per clock cycle

●• Bidirectional data strobe(DQS)

●• Four banks operation

●• Differential clock inputs(CK and CK)

●• DLL aligns DQ and DQS transition with CK transition

●• MRS cycle with address key programs

●   -. Read latency 2, 2.5 (clock)

●   -. Burst length (2, 4, 8)

●   -. Burst type (sequential & interleave)

●• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)

●• Data I/O transactions on both edges of data strobe

●• Edge aligned data output, center aligned data input

●• LDM,UDM/DM for write masking only

●• Auto & Self refresh

●• 15.6us refresh interval(4K/64ms refresh)

●• Maximum burst refresh cycle : 8

●• 66pin TSOP II package