| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 80 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 400 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| hFE Min | 120 @2mA, 6V |
| Input Power (Max) | 400 mW |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | 150℃ (TJ) |
The KSA1015YTA is a PNP Epitaxial Silicon Transistor offers -50V low base voltage VCBO and -150mA collector current.
● Low frequency amplifier
● Complementary to KSC1815
ON Semiconductor
5 Pages / 0.12 MByte
ON Semiconductor
9 Pages / 1.79 MByte
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